thermal annealing

A double-layer polysilicon bipolar technology is presented. Deep-trench isolation and BF_2-implanted base layer, combined with rapid thermal annealing ( RTA), are used in the process for emitter diffusion and titanium silicide annealing.

报道了一种使用深槽隔离和注入基区及快速热退火（RTA），同时为发射极扩散和Ti硅化物退火的双层多晶硅双极技术。

Using the characterizing techniques of micro-Raman scattering, X-ray diffraction and computer simulation, Found that nanoscale silicon particles can be grown in thermally annealed a-Si ∶ H films and the sizes of the formed silicon particles change with the temperature ramp rate in thermal annealing processes.

用喇曼散射、X射线衍射和计算机模拟，发现在非晶硅中所形成的纳米硅颗粒的大小，随着热退火过程中升温速率的变化而变化。

Improve Thermal Fatigue Life of Cast Steel Disk Component for Annealing Furnace

提高退火炉用圆盘构件热疲劳寿命的研究

SIMS Analysis of Migration Characteristics of Fluorine in BF+ 2 Implanted Si and Poly Si Gate Under Rapid Thermal Annealing

BF2~+注入单晶硅和多晶硅栅快速热退火氟迁移特性的SIMS分析

After rapid thermal annealing ( RTA) in Ar atmosphera at high temperature, the flow pattern defects ( FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.

研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。

The trap energy of the traps at band tails formed by the delocalized π electrons decreases after annealing, leading to the increase of leakage current due to field-enhanced thermal excitation of trapped electrons into the conduction band.

非定域π电子在带尾形成陷阱且陷阱能量在退火后降低，从而使更多陷阱电子在场增强热激发作用下进入导带并引起电流增大。

Titanium films are deposited on Si wafers by electron-beam evaporation in vacuum, the base pressure of the system is 10-7 Torr. Solid phase reaction results through rapid thermal annealing.

钛膜在10~（-7）Torr真空中用电子束蒸发沉积在硅单晶片上，以快速热退火方式进行团相反应。

A study of shallow PN junction technology for VLSI by rapid thermal annealing

用白光退火研究VLSI浅结工艺

Tantalum Silicide Formation by Ion-Beam Mixing and Rapid Thermal Annealing

用离子束混合及快速热处理方法形成钽的硅化物

5-20 keV As~+ and BF_2~+ implantation and rapid thermal annealing for forming ultra-shallow junctions

用5&20keV As~+、BF2~+注入与快速热退火制作超浅结的研究

Research on Rapid Thermal Annealing of High Dose Ge~+ Implantation into Silicon

硅中高剂量锗离子注入的快速热退火研究

The mechanisms and optimal parameters of rapid thermal annealing of high dose implanted silicon, fabrication of shallow PN junctions, formation of silicide, reflow of BPSG and RTN of ultrathin oxide films have been discussed from a comprehensive point of view.

包括：RHT设备，高剂量注入硅的RTA机理与最佳RTA条件选择，以及浅PN结制造，硅化物形成，BPSG回流和薄氧化层的快速氮化等RTP技术。

An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.

我们又进一步研究了退火对少数载流子寿命和表面复合速率的影响，因为其对太阳能电池的最终效率影响很大。

Technic of annealing ZnS: Mn thin films deposited by thermal evaporation in sulfur saturated vapor was described.

本文介绍了电阻蒸发ZnS∶Mn薄膜在硫饱和蒸汽压下进行热处理的工艺。

Because of the restriction of traditional denuded strata recovery methods, a few new denuded strata recovery methods rise up, such as thermal annealing of fission tracks in apatite, depositional and erosional processs, and cosmogenic nuclides analysis.

由于传统剥蚀量恢复方法具有局限性，因此新兴起了许多新的地层剥蚀量恢复方法，如磷灰石裂变径迹分析法、沉积波动过程分析法、流体包裹体法和宇宙成因核素分析法。

After thermal annealing about 60 % of radiation damage induced by implantation can be restored.

在热退火后,约60%的注入引起的辐射损伤可以得到恢复.

Titanium silicide thin film formation by nh_3 plasma asisted thermal annealing

NH3等离子体增强热处理形成硅化钛导电薄膜

Study of IMA depth profile thermal annealing effect on distribution of B implanted in silicon crystals

IMA深度剖面图的研究热退火对硅中注入硼分布的影响

Low Energy As_2~+ Implantation and Rapid Thermal Annealing For Forming Shallow Junctions

低能As2~+注入与快速退火形成n~+&p超浅结的研究

Untilting of alkyl chains, aggregation of gauche defects and continuous rotation phase separately play leading function during different thermal annealing range.

膜内烷基链的非倾斜化、邻位交叉缺陷的积聚和烷基链连续旋转相分别在不同的热处理温度范围起着主要的作用。

Thermal Annealing Behaviour of high dose~ ( 40) ar~+ ion implanted silicon layers

高剂量的~（40）Ar~+离子注入硅热退火行为的研究